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| FDFS2P102 October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features * * -3.3 A, -20 V. RDS(ON) = 0.125 @ VGS = -10 V RDS(ON) = 0.200 @ VGS = -4.5 V. VF < 0.39 V @ 1 A (TJ = 125 oC). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. Electrically independent Schottky and MOSFET pinout for design flexibility. * * Applications * * * DC/DC converters Load Switch Motor Drives D D C C A1 A2 G S A 8 7 C C S3 G4 6D 5D Pin 1 A T A=25 oC unless otherwise noted MOSFET Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -20 20 (Note 1a) Units V V A W -3.3 -20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 -55 to +150 C T J, T STG Operating and Storage Temperature Range TA=25 C unless otherwise noted o Schottky Diode Maximum Ratings V RRM IO Repetitive Peak Reverse Voltage Average Forward Current 20 (Note 1a) V A 1 Package Marking and Ordering Information Device Marking FDFS2P102 Device FDFS2P102 Reel Size 13 Tape Width 12mm Quantity 2500 units 2000 Fairchild Semiconductor International FDFS2P102 Rev. E FDFS2P102 Electrical Characteristics Symbol Parameter TA = 25 C unless otherwise noted Test Conditions VGS = 0 V, ID = -250 A VDS = - 16 V, VGS = 0 V TJ = 55C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = -250 A VGS = -10 V, ID = -3.3 A VGS = -4.5 V, ID = -2.5 A VGS = -10 V, VDS = -5 V VDS = -10 V, ID = -3.3 A Min Typ Max Units Off Characteristics BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Forward Leakage Gate-Body Reverse Leakage (Note 2) -20 -1 -10 100 -100 V A nA nA On Characteristics VGS(th) RDS(on) ID(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance -1 -1.4 0.100 0.167 -2 0.125 0.2 V A -10 5 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V, f = 1.0 MHz 270 150 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 8 7 17 10 16 14 27 1.8 10 ns ns ns ns nC VDS = -5 V, ID = -3.3 A, VGS = -10 V, 7 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -1.3 -0.8 -1.2 A V Schottky Diode Characteristics IR VF Reverse Leakage Forward Voltage VR = 20 V IF = 1 A IF = 2 A TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 78 40 250 18 0.47 0.39 0.58 0.53 uA mA V Thermal Characteristics R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105 C/W when mounted on a 0.04 in2 pad of 2 oz. copper. c) 125 C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDFS2P102 Rev. E FDFS2P102 Typical Characteristics 20 - I D, DRAIN-SOURCE CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 16 VGS= -10V -7.0V -6.0V -5.0V -4.5V 1.8 VGS = 4.0V 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 12 4.5V 5.0V 6.0V 7.0V 10V 8 -4.0V 4 -3.5V 0 0 1 2 3 4 -V DS , DRAIN-SOURCE VOLTAGE (V) 5 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 7.6A VGS = 10V ID = 3.8A 0.05 TA = 125 C 0.04 0.03 0.02 0.01 0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) o TA = 25oC Figure 3. On-Resistance Variation with Temperature. 60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55oC 25oC 125 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS2P102 Rev. E FDFS2P102 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.6A 8 (continued) 2400 VDS = 10V 20V 40V CAPACITANCE (pF) 2000 CISS 1600 1200 800 400 0 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) COSS CRSS f = 1MHz VGS = 0 V 6 4 2 0 Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 10 I F, FORWARD CURRENT (A) 5 I R, R EVE R SE CU R R EN T (A ) 0.001 2 1 TJ = 125 C 25 C 0.0005 TJ = 25 C 0.5 0.0002 0.2 0.1 0.0001 0 0.1 0.2 0.3 0.4 V F , FORWARD VOLTAGE (V) 0.5 0.6 0 5 10 15 V R , R EVER SE V OLTA GE (V) 20 Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R JA (t) = r(t) * R JA R JA =135 C/W t1 t2 TJ - TA = P * RJA (t) Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDFS2P102 Rev. E TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1 |
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